收藏本站
November 2013
FCP16N60N / FCPF16N60NT
N-Channel SupreMOS ? MOSFET
600 V, 16 A, 199 m Ω
Features
? R DS(on) = 170 m Ω (Typ.) @ V GS = 10 V, I D = 8 A
? Ultra Low Gate Charge (Typ. Q g = 40.2 nC)
? Low Effective Output Capacitance (Typ. C oss(eff.) = 176 pF)
? 100% Avalanche Tested
? RoHS Compliant
Application
? LCD/LED/PDP TV
Description
The SupreMOS ? MOSFET is Fairchild Semiconductor ’s next
generation of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiates it from
the conventional SJ MOSFETs. This advanced technology and
precise process control provides lowest Rsp on-resistance,
superior switching performance and ruggedness. SupreMOS
MOSFET is suitable for high frequency switching power con-
verter applications such as PFC, server/telecom power, FPD TV
power, ATX power, and industrial power applications.
? Lighting
? Solar Inverter
? AC-DC Power Supply
D
GD
D
S
TO-220
G
S
TO-220F
G
Absolute Maximum Ratings T C = 25 C unless otherwise noted.
S
o
Symbol
V DSS
Drain to Source Voltage
Parameter
FCP16N60N
FCPF16N60NT
600
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
16.0
10.1
±30
16.0*
10.1*
V
A
I DM
E AS
I AR
E AR
dv/dt
P D
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
- Pulsed
(T C = 25 o C)
- Derate Above 25 o C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
48.0
134.4
1.08
355
5.3
1.34
100
20
48.0*
35.7
0.29
A
mJ
A
mJ
V/ns
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FCP16N60N
FCPF16N60NT
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
0.93
62.5
3.5
62.5
o
C/W
?2009 Fairchild Semiconductor Corporation
FCP16N60N / FCPF16N60NT Rev. C1
1
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FCPF16N60 MOSFET N-CH 600V 16A TO-220F
FCPF190N60 MOSFET N-CH 600V TO-220-3
FCPF20N60T MOSFET N-CH 600V 20A TO-220F
FCPF22N60NT MOSFET N-CH 600V 22A TO-220F
FCPF380N60 MOSFET N-CH 600V TO-220-3
FCPF400N60 MOSFET N-CH 600V TO-220-3
FCPF7N60NT MOSFET N-CH 600V 6.8A TO-220F
FCPF7N60T MOSFET N-CH 600V 7A TO-220F
相关代理商/技术参数
FCPF190N60 功能描述:MOSFET SuperFET2, 190mohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCPF190N60_F152 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 600V 20.2A TO-220F
FCPF190N60E 功能描述:MOSFET 600V N-CHAN MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCPF190N60E_F152 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 600V TO-220-3
FCPF20N60 功能描述:MOSFET 600V N-Channel SuperFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCPF20N60FS 功能描述:MOSFET 600V NH MOSFET FRFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCPF20N60S 功能描述:MOSFET 600V , NCH , MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCPF20N60ST 功能描述:MOSFET 600V NH MOSFET FRFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube